tsm6988d 20v dual n - channel mosfet w/esd protected 1 / 6 version: b07 sot - 26 features advance trench process technology high density cell design for ultra low on - resistance application specially designed for li - on battery packs battery switch application ordering information part no. pack age packing tsm6988dcx6 rf sot - 26 3kpcs / 7 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v gs 12 v continuous drain current, v gs @4.5v. i d 6 a pulsed drain current, v gs @4.5v i dm 30 a continuous source current (diode conduction) a,b i s 1.4 a ta = 25 o c 1.25 maximum power dissipation ta = 75 o c p d 0.8 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t s tg - 55 to +150 o c thermal performance parameter symbol limit unit junction to foot (drain) thermal resistance r? jf 30 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 100 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. product summary v ds (v) r ds(on) (m) i d (a) 25 @ v gs = 4.5v 5.4 20 33 @ v gs = 2.5v 4.3 pin definition : 1. gate 2 6. source 2 2. drain 5, drain 3. gate 1 4. source 1 block diagram dual n - channel mosfet
tsm6988d 20v dual n - channel mosfet w/esd protected 2 / 6 version: b07 electrical specifications parameter conditions symbol min t yp max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 0.6 0.8 1.0 v gate body leakage v gs = 12v, v ds = 0v i gss -- -- 10 u a zero gate voltage drain current v ds = 1 6v, v gs = 0v i dss -- -- 1.0 ua on - state drain current v ds 5v, v gs = 4.5v i d(on) 30 -- -- a v gs = 4.5v, i d = 5.4 a -- 2 0 25 drain - source on - state resistance v gs = 2.5v, i d = 4.5 a r ds(on) -- 26 33 m forward transconductance v ds = 10v, i d = 6.0a g fs -- 30 -- s diode forward voltage i s = 1.5a, v gs = 0v v sd - - 0.6 1.2 v dynamic b total gate charge q g -- 15 20 gate - source charge q gs -- 3.4 -- gate - drain charge v ds = 10v, i d = 6a, v gs = 4.5v q gd -- 1.2 -- nc input capacitance c iss -- 950 -- output capacitance c os s -- 450 -- reverse transfer capacitance v ds = 10v, v gs = 0v, f = 1.0mhz c rss -- 135 -- pf switching c turn - on delay time t d(on) -- 140 200 turn - on rise time t r -- 210 250 turn - off delay time t d(off) -- 3700 4800 turn - off fall time v dd = 10v, r l = 10 , i d = 1a, v gen = 4.5v, r g = 6 t f -- 2000 2600 ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subje ct to production testing. b. switching time is essentially independent of operating temperature.
tsm6988d 20v dual n - channel mosfet w/esd protected 3 / 6 version: b07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm6988d 20v dual n - channel mosfet w/esd protected 4 / 6 version: b07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single pu lse power normalized thermal transient impedance, junction - to - ambient
tsm6988d 20v dual n - channel mosfet w/esd protected 5 / 6 version: b07 sot - 26 mechanical drawing marking diagram 88 = device code y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j = oct, k =nov, l =dec) l = lot code sot - 26 dimension millimeters inches dim min typ max min typ max a 0.95 bsc 0.0374 bsc a1 1.9 bsc 0.0748 bsc b 2.60 2.80 3.00 0.1024 0.1 102 0.1181 c 1.40 1.50 1.70 0.0551 0.0591 0.0669 d 2.80 2.90 3.10 0.1101 0.1142 0.1220 e 1.00 1.10 1.20 0.0394 0.0433 0.0472 f 0.00 -- 0.10 0.00 0.0039 g 0.35 0.40 0.50 0.0138 0.0157 0.0197 h 0.10 0.15 0.20 0.0039 0.0059 0.0079 i 0.30 -- 0.60 0.011 8 -- 0.0236 j 5 -- 10 5 -- 10
tsm6988d 20v dual n - channel mosfet w/esd protected 6 / 6 version: b07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for suc h products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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